| PART |
Description |
Maker |
| 2SK3717 |
N-channel Silicon J-FET
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC
|
| 2SK3718 |
N-channel Silicon J-FET
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC[NEC]
|
| 2SJ486 |
RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开
Silicon P Channel MOS FET Low FrequencyPower Switching
Silicon P-Channel MOS FET
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| ENA1198 SCH2408 |
350 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| 2SJ517 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| HAT2058R-EL-E HAT2058RJ-EL-E HAT2058R05 |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| 2SK2216 |
Silicon N-Channel MOS FET
From old datasheet system
Silicon NPN Triple Diffused
|
Hitachi Semiconductor
|
| SSM5G02TU-14 |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| HAT2035R HAT2035R-EL-E |
0.5 A, 150 V, 5.5 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| CTLM8110-M832D |
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER
|
Central Semiconductor Corp
|
